Facilities: Difference between revisions
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== Growth == | == Growth == | ||
[[File:MBE.jpg|frame|center|Our Molecular Beam Epitaxy system capable of growing materials with atomic layer precision. Using this setup we can achieve epitaxial growth of complex oxides, topological insulators, and other novel materials.]] | [[File:MBE-2017-2.jpg|frame|center|Our Molecular Beam Epitaxy system capable of growing materials with atomic layer precision. Using this setup we can achieve epitaxial growth of complex oxides, topological insulators, and other novel materials.]] | ||
Revision as of 16:36, 18 July 2017
Growth
Our Molecular Beam Epitaxy system capable of growing materials with atomic layer precision. Using this setup we can achieve epitaxial growth of complex oxides, topological insulators, and other novel materials.
In addition to our MBE system, our lab is equipped with a custom built sputtering chamber. It provides variable temperature ion milling and DC/RF sputtering capabilities.
Characterization & Fabrication
Superconducting Magnet
Electromagnet
Micro-Probe Station
Optical Microscopy Station
Optical & E-beam Lithography systems in Rutgers Physics Nanofab used to fabricate nano-scale devices from our samples
The Thermal Evaporator, E-beam Evaporator, and Sputtering chamber are used as additional methods of thin film deposition.