Main Page: Difference between revisions
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== Job Opening == | == Job Opening == | ||
We are | We are looking for two postdoc candidates: one will initiate our efforts on development of oxide topological insulators and the other on spintronic topological insulator devices. | ||
Successful | Successful candidates should be skilled in some of the following areas. | ||
1. Thin film growth techniques: (complex-)oxide MBE, compound- | 1. Thin film growth techniques: (complex-)oxide MBE, compound-semiconductor (III-V, II-VI, etc) MBE, or other thin film growth techniques adapted to heterostructure engineering of complex oxides, compound semiconductors, or other layered materials. | ||
2. Thin film characterization schemes: XRD, AFM, etc. | 2. Thin film characterization schemes: XRD, AFM, etc. | ||
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If you are highly motivated and interested in exploring these newly emerging fields, | If you are highly motivated and interested in exploring these newly emerging fields, | ||
please send your detailed CV including names of three reference writers, and a research statement to | please send your detailed CV including names of three reference writers, and a research statement to | ||
ohsean | ohsean"At"physics.rutgers.edu; in your research statement, please state which of the two directions you are more interested in. | ||
Revision as of 14:30, 9 October 2012
Our group's specialty is growth and transport study of thin films grown by Molecular Beam Epitaxy (MBE). Our custom-designed MBE system has a number of unique capabilities that facilitate atomic-scale engineering of a variety of novel material systems. Utilizing these unique capabilities, we are actively investigating topological insulators, complex oxides and their heterostructures. Such heterostructures could yield new physics and devices that are intriguing both intellectually and technologically. We are currently one of the leading groups in thin film topological insulators.
Job Opening
We are looking for two postdoc candidates: one will initiate our efforts on development of oxide topological insulators and the other on spintronic topological insulator devices.
Successful candidates should be skilled in some of the following areas.
1. Thin film growth techniques: (complex-)oxide MBE, compound-semiconductor (III-V, II-VI, etc) MBE, or other thin film growth techniques adapted to heterostructure engineering of complex oxides, compound semiconductors, or other layered materials.
2. Thin film characterization schemes: XRD, AFM, etc.
3. (Magneto-) Transport studies of thin film structures and devices (oxides, semiconductors, graphene-like materials, or topological insulators).
4. Cryogenics (sub-liquid-helium temperatures) and transport-instrumentation (+ Labview programming).
5. Photo(ebeam) lithography.
6. Paper writing.
Considering that many renowned groups around the world are currently working on our thin film structures, this position will provide additional opportunities to form strong networks with those great scientists, which will be invaluable for his/her future career.
If you are highly motivated and interested in exploring these newly emerging fields, please send your detailed CV including names of three reference writers, and a research statement to ohsean"At"physics.rutgers.edu; in your research statement, please state which of the two directions you are more interested in.