Facilities: Difference between revisions
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(Created page with "== Growth == [[File:MBE.jpg|frame|center|Our Molecular Beam Epitaxy system capable of growing materials with atomic layer precision. Using this setup we can achieve epitaxial gro...") |
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== Growth == | == Growth == | ||
[[File:MBE.jpg|frame|center|Our Molecular Beam Epitaxy system capable of growing materials with atomic layer precision. Using this setup we can achieve epitaxial growth of complex oxides, topological insulators, and other novel materials.]] | [[File:MBE-updated-2017.jpg|frame|center|Our Molecular Beam Epitaxy system capable of growing materials with atomic layer precision. Using this setup we can achieve epitaxial growth of complex oxides, topological insulators, and other novel materials.]] | ||
[[File:ion.jpg|frame|center|In addition to our MBE system, our lab is equipped with a custom built sputtering chamber. It provides variable temperature ion milling and DC/RF sputtering capabilities.]] | [[File:ion.jpg|frame|center|In addition to our MBE system, our lab is equipped with a custom built sputtering chamber. It provides variable temperature ion milling and DC/RF sputtering capabilities.]] | ||
== Characterization & Fabrication == | == Characterization & Fabrication == |
Revision as of 16:17, 18 July 2017
Growth
Characterization & Fabrication