Molecular Beam Epitaxy & Quantum Device Lab
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About Us

Our group's specialty is growth and transport study of thin films grown by Molecular Beam Epitaxy (MBE). Using our MBE system, we can achieve precise control of thin film structures down to the atomic scale.

Unlike traditional MBE systems, our setup has the capability to grow complex-oxide thin films. As a result, we can explore novel behavior in thin film complex oxides and complex oxide superlattices. 

In addition, our MBE system is being used to grow other emergent materials. Most recently, we have grown thin film Bi2Se3, a 3D-Topological Insulator.

Using our MBE capabilities, we can grow heterostructures composed of various different classes of materials: from Topological Insulators to Superconductors to Complex Oxides. Such heterostructures could yield new and interesting Condensed Matter phenomena.

News

    -New website is almost done!
    -New preprints uploaded to ArXiv, link through from Publications
    -Publications list updated


ohsean (at) physics.rutgers.edu
Department of Physics &  Astronomy
Rutgers, The State University of New Jersey
136 Frelinghyusen Rd.
Piscatawy, NJ 08854-8019

Office: W121     Tel: (732) 445-5500, ext. 4017      Fax: (732) 445-4343
Lab: W132         Tel: (732) 445-5500, ext. 7610
Lab: E278           Tel: (732) 445-5500, ext. 7611

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